MT41K2G4RKB-107 C:N TR

8Gb: x4, x8 TwinDie DDR3L SDRAM Description TwinDie™ 1.35V DDR3L SDRAM MT41K2G4 – 128 Meg x 4 x 8 Banks x 2 Ranks MT41K1G8 – 64 Meg x 8 x 8 Banks x 2 Ranks Description Options Marking • Configuration – 128 Meg x 4 x 8 banks x 2 ranks – 64 Meg x 8 x 8 banks x 2 ranks • 78-ball FBGA package (Pb-free) – (9.5mm x 11.5mm x 1.2mm) Die Rev :E – (8mm x 10.5mm x 1.2mm) Die Rev :N, P • Timing – cycle time1 – 1.071ns @ CL = 13 (DDR3L-1866) – 1.25ns @ CL = 11 (DDR3L-1600) – 1.5ns @ CL = 9 (DDR3L-1333) • Self refresh – Standard • Operating temperature – Commercial (0°C ≤ T C ≤ 95°C) – Industrial (-40°C ≤ T C ≤ 95°C) • Revision The 8Gb (TwinDie™) DDR3L SDRAM (1.35V) uses Micron’s 4Gb DDR3L SDRAM die (essentially two ranks of the 4Gb DDR3L SDRAM). Refer to Micron’s 4Gb DDR3 SDRAM data sheet for the specifications not included in this document. Specifications for base part number MT41K1G4 correlate to TwinDie manufacturing part number MT41K2G4; specifications for base part number MT41K512M8 correlate to TwinDie manufacturing part number MT41K1G8. Features • Uses 4Gb Micron die • Two ranks (includes dual CS#, ODT, CKE, and ZQ balls) • Each rank has eight internal banks for concurrent operation • VDD = V DDQ = 1.35V (1.283–1.45V); backward compatible to V DD = V DDQ = 1.5V ±0.075V • 1.35V center-terminated push/pull I/O • JEDEC-standard ball-out • Low-profile package • TC of 0°C to 95°C – 0°C to 85°C: 8192 refresh cycles in 64ms – 85°C to 95°C: 8192 refresh cycles in 32ms – Industrial temperature (IT) available (Rev. E) Note: 2G4 1G8 TRF RKB -107 -125 -15E None None IT :E/:N/:P 1. CL = CAS (READ) latency. Table 1: Key Timing Parameters Data Rate (MT/s) Target tRCD-tRP-CL 1, 2 1866 13-13-13 13.91 13.91 13.91 1 1600 11-11-11 13.75 13.75 13.75 1333 9-9-9 13.5 13.5 13.5 Speed Grade -107 -125 -15E Notes: tRCD (ns) tRP (ns) CL (ns) 1. Backward compatible to 1333, CL = 9 (-15E). 2. Backward compatible to 1600, CL = 11 (-125). CCMTD-1725822587-9746 DDR3L_8Gb_x4_x8_2CS_TwinDie_V90B.pdf - Rev. K 8/18 EN 1 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice. 8Gb: x4, x8 TwinDie DDR3L SDRAM Description Table 2: Addressing Parameter Configuration Refresh count 2048 Meg x 4 1024 Meg x 8 128 Meg x 4 x 8 banks x 2 ranks 64 Meg x 8 x 8 banks x 2 ranks 8K 8K Row address 64K A[15:0] 64K A[15:0] Bank address 8 BA[2:0] 8 BA[2:0] 2K A[11, 9:0] 1K A[9:0] Column address CCMTD-1725822587-9746 DDR3L_8Gb_x4_x8_2CS_TwinDie_V90B.pdf - Rev. K 8/18 EN 2 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. 8Gb: x4, x8 TwinDie DDR3L SDRAM Ball Assignments and Descriptions Ball Assignments and Descriptions Figure 1: 78-Ball FBGA Ball Assignments (Top View) A 1 2 3 VSS VDD VSS 4 5 6 7 8 9 NC NF, NF/TDQS# VSS VDD VSSQ DQ0 DM, DM/TDQS VSSQ VDDQ VDDQ DQ2 DQS DQ1 DQ3 VSSQ VSSQ NF, DQ6 DQS# VDD VSS VSSQ B C D E VREFDQ VDDQ NF, DQ4 NF, DQ7 NF, DQ5 F VDDQ ODT1 VSS RAS# CK VSS CKE1 ODT0 VDD CAS# CK# VDD CKE0 CS1# CS0# WE# A10/AP ZQ0 ZQ1 VSS BA0 BA2 A15 VREFCA VSS VDD A3 A0 A12/BC# BA1 VDD VSS A5 A2 A1 A4 VSS VDD A7 A9 A11 A6 VDD VSS RESET# A13 A14 A8 VSS G H J K L M N Note: 1. Dark balls (with ring) designate balls that differ from the monolithic versions. CCMTD-1725822587-9746 DDR3L_8Gb_x4_x8_2CS_TwinDie_V90B.pdf - Rev. K 8/18 EN 3 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. 8Gb: x4, x8 TwinDie DDR3L SDRAM Ball Assignments and Descriptions Table 3: FBGA 78-Ball Descriptions Symbol Type Description A15, A14, A13, A12/BC#, A11, A10/AP, A[9:0] Input Address inputs: Provide the row address for ACTIVATE commands, and the column address and auto precharge bit (A10) for READ/WRITE commands, to select one location out of the memory array in the respective bank. A10 sampled during a PRECHARGE command determines whether the PRECHARGE applies to one bank (A10 LOW, bank selected by BA[2:0]) or all banks (A10 HIGH). The address inputs also provide the op-code during a LOAD MODE command. Address inputs are referenced to VREFCA. A12/BC#: When enabled in the mode register (MR), A12 is sampled during READ and WRITE commands to determine whether burst chop (on-the-fly) will be performed (HIGH = burst length (BL) of 8 or no burst chop, LOW = burst chop (BC) of 4, burst chop). BA[2:0] Input Bank address inputs: BA[2:0] define the bank to which an ACTIVATE, READ, WRITE, or PRECHARGE command is being applied. BA[2:0] define which mode register (MR0, MR1, MR2, or MR3) is loaded during the LOAD MODE command. BA[2:0] are referenced to VREFCA. CK, CK# Input Clock: CK and CK# are differential clock inputs. All command, address, and control input signals are sampled on the crossing of the positive edge of CK and the negative edge of CK#. Output data strobe (DQS, DQS#) is referenced to the crossings of CK and CK#. CKE[1:0] Input Clock enable: CKE enables (registered HIGH) and disables (registered LOW) internal circuitry and clocks on the DRAM. The specific circuitry that is enabled/disabled is dependent upon the DDR3L SDRAM configuration and operating mode. Taking CKE LOW provides PRECHARGE power-down and SELF REFRESH operations (all banks idle) or active power-down (row active in any bank). CKE is synchronous for power-down entry and exit and for self refresh entry. CKE is asynchronous for self refresh exit. Input buffers (excluding CK, CK#, CKE, RESET#, and ODT) are disabled during power-down. Input buffers (excluding CKE and RESET#) are disabled during SELF REFRESH. CKE is referenced to VREFCA. CS#[1:0] Input Chip select: CS# enables (registered LOW) and disables (registered HIGH) the command decoder. All commands are masked when CS# is registered HIGH. CS# provides for external rank selection on systems with multiple ranks. CS# is considered part of the command code. DM Input Input data mask: DM is an input mask signal for write data. Input data is masked when DM is sampled HIGH, along with the input data, during a write access. Although the DM ball is input-only, the DM loading is designed to match that of the DQ and DQS balls. DM is referenced to VREFDQ. DM has an optional use as TDQS on the x8. ODT[1:0] Input On-die termination: ODT enables (registered HIGH) and disables (registered LOW) termination resistance internal to the DDR3L SDRAM. When enabled in normal operation, ODT is only applied to each of the following balls: DQ[7:0], DQS, DQS#, and DM for the x8; DQ[3:0], DQS, DQS#, and DM for the x4. The ODT input is ignored if disabled via the LOAD MODE command. ODT is referenced to VREFCA. RAS#, CAS#, WE# Input Command inputs: RAS#, CAS#, and WE# (along with CS#) define the command being entered and are referenced to VREFCA. RESET# Input Reset: RESET# is an active LOW CMOS input referenced to VSS. The RESET# input receiver is a CMOS input defined as a rail-to-rail signal with DC HIGH ≥ 0.8 × VDDQ and DC LOW ≤ 0.2 × VDDQ. RESET# assertion and desertion are asynchronous. DQ[3:0] I/O Data input/output: Bidirectional data bus for x4 configuration. DQ[3:0] are referenced to VREFDQ. CCMTD-1725822587-9746 DDR3L_8Gb_x4_x8_2CS_TwinDie_V90B.pdf - Rev. K 8/18 EN 4 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. 8Gb: x4, x8 TwinDie DDR3L SDRAM Ball Assignments and Descriptions Table 3: FBGA 78-Ball Descriptions (Continued) Symbol Type DQ[7:0] I/O Description Data input/output: Bidirectional data bus for x8 configuration. DQ[7:0] are referenced to VREFDQ. DQS, DQS# I/O Data strobe: DQS and DQS# are differential data strobes: Output with read data; edge aligned with read data; input with write data; center-aligned with write data. TDQS, TDQS# I/O Termination data strobe: Applies to the x8 configuration only. When TDQS is enabled, DM is disabled, and the TDQS and TDQS# balls provide termination resistance. VDD Supply Power supply: 1.35V (1.283V to 1.45V operational; compatible with 1.5V operation) VDDQ Supply DQ power supply: 1.35V (1.283V to 1.45V operational; compatible with 1.5V operation). Isolated on the device for improved noise immunity. VREFCA Supply Reference voltage for control, command, and address: VREFCA must be maintained at all times (including self refresh) for proper device operation. VREFDQ Supply Reference voltage for data: VREFDQ must be maintained at all times (including self refresh) for proper device operation. VSS Supply Ground. VSSQ Supply DQ ground: Isolated on the device for improved noise immunity. ZQ[1:0] Reference External reference ball for output drive calibration: This ball is tied to an external 240Ω resistor (RZQ), which is tied to VSSQ. NC – No connect: These balls should be left unconnected (the ball has no connection to the DRAM or to other balls). NF – No function: When configured as a x4 device, these balls are NF. When configured as a x8 device, these balls are defined as TDQS#, DQ[7:4]. CCMTD-1725822587-9746 DDR3L_8Gb_x4_x8_2CS_TwinDie_V90B.pdf - Rev. K 8/18 EN 5 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. 8Gb: x4, x8 TwinDie DDR3L SDRAM Functional Description Functional Description The TwinDie DDR3L SDRAM is a high-speed, CMOS dynamic random access memory device internally configured as two 8-bank DDR3L SDRAM devices. Although each die is tested individually within the dual-die package, some TwinDie test results may vary from a like die tested within a monolithic die package. The DDR3L SDRAM uses a double data rate architecture to achieve high-speed operation. The double data rate architecture is an 8n-prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O balls. A single read or write access consists of a single 8n-bit-wide, one-clock-cycle data transfer at the internal DRAM core and eight corresponding n-bit-wide, one-half-clock-cycle data transfers at the I/O balls. The differential data strobe (DQS, DQS#) is transmitted externally, along with data, for use in data capture at the DDR3L SDRAM input receiver. DQS is center-aligned with data for WRITEs. The read data is transmitted by the DDR3L SDRAM and edge-aligned to the data strobes. Read and write accesses to the DDR3L SDRAM are burst-oriented. Accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of an ACTIVATE command, which is then followed by a READ or WRITE command. The address bits registered coincident with the ACTIVATE command are used to select the bank and row to be accessed. The address bits (including CSn#, BAn, and An) registered coincident with the READ or WRITE command are used to select the rank, bank, and starting column location for the burst access. This data sheet provides a general description, package dimensions, and the package ballout. Refer to the Micron monolithic DDR3L data sheet for complete information regarding individual die initialization, register definition, command descriptions, and die operation. Industrial Temperature The industrial temperature (IT) option, if offered, requires that the case temperature not exceed –40°C or 95°C. JEDEC specifications require the refresh rate to double when TC exceeds 85°C; this also requires use of the high-temperature self refresh option. Additionally, ODT resistance, IDD values, some IDD specifications and the input/output impedance must be derated when T C is < 0°C or > 95°C. See the DDR3 monolithic data sheet for details. CCMTD-1725822587-9746 DDR3L_8Gb_x4_x8_2CS_TwinDie_V90B.pdf - Rev. K 8/18 EN 6 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. 8Gb: x4, x8 TwinDie DDR3L SDRAM Functional Block Diagrams Functional Block Diagrams Figure 2: Functional Block Diagram (128 Meg x 4 x 8 Banks x 2 Ranks) Rank 1 (128 Meg x 4 x 8 banks) Rank 0 (128 Meg x 4 x 8 banks) CS1# CAS# CKE1 RAS# ODT1 WE# CK CK# CS0# CKE0 A[15:0], BA[2:0] ZQ1 ODT0 ZQ0 DQS, DQS# DQ[3:0] DM Figure 3: Functional Block Diagram (64 Meg x 8 x 8 Banks x 2 Ranks) Rank 1 (64 Meg x 8 x 8 banks) Rank 0 (64 Meg x 8 x 8 banks) CS1# RAS# CKE1 CAS# ODT1 WE# CK CK# CS0# CKE0 A[15:0], BA[2:0] ZQ1 ODT0 ZQ0 DQS, DQS# DQ[7:0] DM/TDQS TDQS# CCMTD-1725822587-9746 DDR3L_8Gb_x4_x8_2CS_TwinDie_V90B.pdf - Rev. K 8/18 EN 7 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. 8Gb: x4, x8 TwinDie DDR3L SDRAM Electrical Specifications – Absolute Ratings Electrical Specifications – Absolute Ratings Stresses greater than those listed may cause permanent damage to the device. This is a stress rating only, and functional operation of the device at these or any other conditions outside those indicated in the device data sheet is not implied. Exposure to absolute maximum rating conditions for extended periods may adversely affect reliability. Table 4: Absolute Maximum DC Ratings Parameter Symbol Min Max Units Notes VDD supply voltage relative to VSS VDD –0.4 1.975 V 1 VDD supply voltage relative to VSSQ VDDQ –0.4 1.975 V Voltage on any ball relative to VSS VIN, VOUT –0.4 1.975 V Input leakage current Any input 0V ≤ VIN ≤ VDD, VREF pin 0V ≤ VIN ≤ 1.1V (All other pins not under test = 0V) II –4 4 µA VREF supply leakage current VREFDQ = VDD/2 or VREFCA = VDD/2 (All other pins not under test = 0V) IVREF –2 2 µA 2 TC 0 95 °C 3, 4 TSTG –55 150 °C Operating case temperature Storage temperature Notes: 1. VDD and VDDQ must be within 300mV of each other at all times, and VREF must not be greater than 0.6 × VDDQ. When VDD and VDDQ are less than 500mV, VREF may be ≤300mV. 2. The minimum limit requirement is for testing purposes. The leakage current on the VREF pin should be minimal. 3. MAX operating case temperature. TC is measured in the center of the package (see Figure 4 (page 9)). 4. Device functionality is not guaranteed if the DRAM device exceeds the maximum TC during operation. Temperature and Thermal Impedance It is imperative that the DDR3L SDRAM device’s temperature specifications, shown in the following table, be maintained in order to ensure the junction temperature is in the proper operating range to meet data sheet specifications. An important step in maintaining the proper junction temperature is using the device’s thermal impedances correctly. The thermal impedances listed in Table 6 (page 10) apply to the current die revision and packages. Incorrectly using thermal impedances can produce significant errors. Read Micron technical note TN-00-08, “Thermal Applications,” prior to using the values listed in the thermal impedance table. For designs that are expected to last several years and require the flexibility to use several DRAM die shrinks, consider using final target theta values (rather than existing values) to account for increased thermal impedances from the die size reduction. The DDR3L SDRAM device’s safe junction temperature range can be maintained when the T C specification is not exceeded. In applications where the device’s ambient tem- CCMTD-1725822587-9746 DDR3L_8Gb_x4_x8_2CS_TwinDie_V90B.pdf - Rev. K 8/18 EN 8 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. 8Gb: x4, x8 TwinDie DDR3L SDRAM Electrical Specifications – Absolute Ratings perature is too high, use of forced air and/or heat sinks may be required to satisfy the case temperature specifications. Table 5: Thermal Characteristics Notes 1–3 apply to entire table Parameter Operating temperature Notes: Symbol Value Units TC 0 to 85 °C 0 to 95 °C Notes 4 1. MAX operating case temperature TC is measured in the center of the package, as shown below. 2. A thermal solution must be designed to ensure that the device does not exceed the maximum TC during operation. 3. Device functionality is not guaranteed if the device exceeds maximum TC during operation. 4. If TC exceeds 85°C, the DRAM must be refreshed externally at 2x refresh, which is a 3.9µs interval refresh rate. The use of self refresh temperature (SRT) or automatic self refresh (ASR), if available, must be enabled. Figure 4: Temperature Test Point Location Test point Length (L) 0.5 (L) 0.5 (W) Width (W) CCMTD-1725822587-9746 DDR3L_8Gb_x4_x8_2CS_TwinDie_V90B.pdf - Rev. K 8/18 EN 9 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. 8Gb: x4, x8 TwinDie DDR3L SDRAM Electrical Specifications – Absolute Ratings Table 6: Thermal Impedance Die Rev E N P Package 78-ball 78-ball 78-ball Θ JA (°C/W) Airflow = 0m/s Θ JA (°C/W) Airflow = 1m/s Θ JA (°C/W) Airflow = 2m/s Θ JB (°C/W) Θ JC (°C/W) Low Conductivity 57.7 44.1 38.8 NA 2.1 High Conductivity 36.7 30.6 28.1 18.6 NA Low Conductivity 53.1 41.4 37.3 NA 3.1 High Conductivity 32.9 27.5 25.8 13.0 NA Low Conductivity TBD TBD TBD TBD TBD High Conductivity TBD TBD TBD TBD TBD Substrate Note: Notes 1 1 1 1. Thermal resistance data is based on a number of samples from multiple lots and should be viewed as a typical number. CCMTD-1725822587-9746 DDR3L_8Gb_x4_x8_2CS_TwinDie_V90B.pdf - Rev. K 8/18 EN 10 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. 8Gb: x4, x8 TwinDie DDR3L SDRAM Electrical Specifications – ICDD Parameters Electrical Specifications – ICDD Parameters Table 7: DDR3L ICDD Specifications and Conditions (Rev E) Note 1 applies to the entire table Combined Individual Symbol Die Status Bus Width -187E -15E -125 -107 Units ICDD0 ICDD0 = IDD0 + IDD2P0 + 5 x4, x8 67 70 78 85 mA ICDD1 ICDD1 = IDD1 + IDD2P0 + 5 x4 76 80 84 88 mA x8 82 85 89 93 ICDD2P0 (slow exit) ICDD2P0 = IDD2P0 + IDD2P0 x4, x8 36 36 36 36 mA ICDD2P1 (fast exit) ICDD2P1 = IDD2P1 + IDD2P0 x4, x8 44 46 50 55 mA ICDD2Q ICDD2Q = IDD2Q + IDD2P0 x4, x8 45 46 50 53 mA ICDD2N ICDD2N = IDD2N + IDD2P0 x4, x8 46 47 50 53 mA ICDD2N T ICDD2NT = IDD2NT + IDD2P0 x4, x8 50 53 57 60 mA ICDD3P ICDD3P = IDD3P + IDD2P0 x4, x8 50 53 56 59 mA ICDD3N ICDD3N = IDD3N + IDD2P0 x4, x8 50 53 56 59 mA ICDD4R ICDD4RCDD4R = IDD4R + IDD2P0 + 5 x4 136 153 170 187 mA x8 146 163 180 197 ICDD4W = IDD4W + IDD2P0 + 5 x4 110 126 141 156 x8 118 133 148 164 ICDD5B ICDD5B = IDD5B + IDD2P0 x4, x8 242 246 253 260 mA ICDD6 ICDD6 = IDD6 + IDD6 x4, x8 40 40 40 40 mA ICDD6ET ICDD6ET = IDD6ET + IDD6ET x4, x8 50 50 50 50 mA ICDD7 ICDD7 = IDD7 + IDD2P0 + 5 x4, x8 183 213 243 274 mA ICDD8 ICDD8 = 2 × IDD2P0 +4 x4, x8 40 40 40 40 mA ICDD4W Note: mA 1. ICDD values reflect the combined current of both individual die. IDDx represents individual die values. CCMTD-1725822587-9746 DDR3L_8Gb_x4_x8_2CS_TwinDie_V90B.pdf - Rev. K 8/18 EN 11 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. 8Gb: x4, x8 TwinDie DDR3L SDRAM Electrical Specifications – ICDD Parameters Table 8: DDR3L ICDD Specifications and Conditions (Rev N) Note 1 applies to the entire table Combined Individual Symbol Die Status Bus Width -15E -125 -107 Units ICDD0 ICDD0 = IDD0 + IDD2P0+ 5 x4, x8 58 60 62 mA ICDD1 ICDD1 = IDD1 + IDD2P0 + 5 x4 66 69 72 mA x8 71 74 77 mA ICDD2P0 (slow exit) ICDD2P0 = IDD2P0 + IDD2P0 x4, x8 16 16 16 mA ICDD2P1 (fast exit) ICDD2P1 = IDD2P1 + IDD2P0 x4, x8 20 22 24 mA ICDD2Q ICDD2Q = IDD2Q + IDD2P0 x4, x8 30 32 34 mA ICDD2N ICDD2N = IDD2N + IDD2P0 x4, x8 30 32 34 mA ICDD2N T ICDD2NT = IDD2NT + IDD2P0 x4, x8 34 36 38 mA ICDD3P ICDD3P = IDD3P + IDD2P0 x4, x8 32 34 36 mA ICDD3N ICDD3N = IDD3N + IDD2P0 x4, x8 36 38 40 mA ICDD4R ICDD4RCDD4R = IDD4R + IDD2P0 + 5 x4 88 98 108 mA x8 98 108 118 ICDD4W = IDD4W + IDD2P0 + 5 x4 88 98 108 x8 98 108 118 ICDD5B ICDD5B = IDD5B + IDD2P0 x4, x8 178 183 188 mA ICDD6 ICDD6 = IDD6 + IDD6 x4, x8 24 24 24 mA ICDD6ET ICDD6ET = IDD6ET + IDD6ET x4, x8 32 32 32 mA ICDD7 ICDD7 = IDD7 + IDD2P0 + 5 x4, x8 133 143 153 mA ICDD8 ICDD8 = 2 × IDD2P0 + 4 x4, x8 20 20 20 mA ICDD4W Note: mA 1. ICDD values reflect the combined current of both individual die. IDDx represents individual die values. CCMTD-1725822587-9746 DDR3L_8Gb_x4_x8_2CS_TwinDie_V90B.pdf - Rev. K 8/18 EN 12 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. 8Gb: x4, x8 TwinDie DDR3L SDRAM Electrical Specifications – ICDD Parameters Table 9: DDR3L ICDD Specifications and Conditions (Rev P) Note 1 applies to the entire table Combined Individual Symbol Die Status Bus Width -125 -107 -093 Units ICDD0 ICDD0 = IDD0 + IDD2P0+ 5 x4, x8 43 45 48 mA ICDD1 ICDD1 = IDD1 + IDD2P0 + 5 x4, x8 58 60 64 mA ICDD2P0 (slow exit) ICDD2P0 = IDD2P0 + IDD2P0 x4, x8 20 22 24 mA ICDD2P1 (fast exit) ICDD2P1 = IDD2P1 + IDD2P0 x4, x8 21 22 25 mA ICDD2Q ICDD2Q = IDD2Q + IDD2P0 x4, x8 25 26 29 mA ICDD2N ICDD2N = IDD2N + IDD2P0 x4, x8 26 28 34 mA ICDD2N T ICDD2NT = IDD2NT + IDD2P0 x4, x8 30 33 39 mA ICDD3P ICDD3P = IDD3P + IDD2P0 x4, x8 25 26 29 mA ICDD3N ICDD3N = IDD3N + IDD2P0 x4, x8 30 32 35 mA ICDD4R ICDD4RCDD4R = IDD4R + IDD2P0 + 5 x4, x8 105 106 127 mA ICDD4W ICDD4W = IDD4W + IDD2P0 + 5 x4, x8 105 106 127 mA ICDD5B ICDD5B = IDD5B + IDD2P0 x4, x8 160 163 172 mA ICDD6 ICDD6 = IDD6 + IDD6 x4, x8 30 30 30 mA ICDD6ET ICDD6ET = IDD6ET + IDD6ET x4, x8 46 46 46 mA ICDD7 ICDD7 = IDD7 + IDD2P0 + 5 x4, x8 145 162 167 mA ICDD8 ICDD8 = 2 × IDD2P0 + 4 x4, x8 24 26 30 mA Note: 1. ICDD values reflect the combined current of both individual die. IDDx represents individual die values. CCMTD-1725822587-9746 DDR3L_8Gb_x4_x8_2CS_TwinDie_V90B.pdf - Rev. K 8/18 EN 13 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. 8Gb: x4, x8 TwinDie DDR3L SDRAM Package Dimensions Package Dimensions Figure 5: 78-Ball FBGA Die Rev. E (package code TRF) Seating plane A 78X Ø0.45 Dimensions apply to solder balls post-reflow on Ø0.33 NSMD ball pads. 0.12 A Ball A1 ID (covered by SR) 9 8 7 3 2 Ball A1 ID 1 A B C D E 11.5 ±0.1 F 9.6 CTR G H J K L M 0.8 TYP N 1.1 ±0.1 0.8 TYP 6.4 CTR 0.3 ±0.05 9.5 ±0.1 Notes: 1. All dimensions are in millimeters. 2. Solder ball material: SAC305 (96.5% Sn, 3% Ag, 0.5% Cu). CCMTD-1725822587-9746 DDR3L_8Gb_x4_x8_2CS_TwinDie_V90B.pdf - Rev. K 8/18 EN 14 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. 8Gb: x4, x8 TwinDie DDR3L SDRAM Package Dimensions Figure 6: 78-Ball FBGA Die Rev. N, P (package code RKB) Seating plane A 78X Ø0.45 Dimensions apply to solder balls postreflow on Ø0.33 NSMD ball pads. 0.12 A Ball A1 ID (covered by SR) 9 8 7 3 2 Ball A1 ID 1 A B C D E 10.5 ±0.1 F 9.6 CTR G H J K L M 0.8 TYP N 1.1 ±0.1 0.8 TYP 6.4 CTR 0.3 ±0.05 8 ±0.1 Notes: 1. All dimensions are in millimeters. 2. Solder ball material: SAC305 (96.5% Sn, 3% Ag, 0.5% Cu). 8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-4000 www.micron.com/products/support Sales inquiries: 800-932-4992 Micron and the Micron logo are trademarks of Micron Technology, Inc. TwinDie is a trademark of Micron Technology, Inc. All other trademarks are the property of their respective owners. This data sheet contains minimum and maximum limits specified over the power supply and temperature range set forth herein. Although considered final, these specifications are subject to change, as further product development and data characterization sometimes occur. CCMTD-1725822587-9746 DDR3L_8Gb_x4_x8_2CS_TwinDie_V90B.pdf - Rev. K 8/18 EN 15 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved.